Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | 8-SOIC(0.173,4.40mm wide) |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 450mW |
FET Type | 2 N-channels(two) |
Drain source voltage (Vdss) | 20V |
Current at 25 ° C - continuous drain (Id) | 5A |
On resistance (maximum) for different Ids and Vgs | 50 mΩ @ 2.5A,4V |
Vgs (th) (maximum) for different Ids | 1.2V @ 200µA |
Gate charge (Qg) at different Vgs (maximum) | 9.5nC @ 5V |
Input capacitance at different Vds (Ciss) (maximum) | 780pF @ 10V |
FET function | Logic level gate |